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Indium Phosphide (InP)

A material platform on which emitting and amplifying components such as lasers and SOAs can be monolithically integrated on the same chip. LightBridge can advise on the SMART Photonics InP platform.

Material system

InP compound semiconductor

Strengths

Photonic integrated circuits with emitting and amplifying components

Delivery model

This varies by foundry and by run. Please contact us.

Designs it suits

Designs integrating the light source on the chip

Designs using SOA gain within the circuit

Transmit and receive circuits combining emission, modulation and detection

When another platform should be considered

If the source can be supplied externally and low-loss passive circuits are the main requirement, silicon photonics or silicon nitride may suit better.

View Silicon Photonics

View Silicon Nitride

Scope

Main design areas

This platform is chosen on the basis of whether active functions such as emission, amplification, detection and high-speed modulation are needed on chip.

01

Emitting components

Lasers and other components that generate light on the chip.

02

Amplifying components

SOAs and other components that amplify light within the circuit.

03

Detection, modulation and passive components

Circuits are built by combining photodetectors, modulators and passive waveguides.

The building blocks available and how they can be combined are set by the target foundry’s PDK and design rules.

Design workflow

How the design process works, including analysis and simulation, is covered under Solutions.

View the InP photonics design workflow

Last updated

August 28, 2026

Tell us the target device and the components you need

It is fine if the epitaxial structure is not yet settled. We will start by looking at whether the platform fits.