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The InP photonics design workflow

InP handles gain and amplification, absorption and photodetection on one platform. Design starts from the band structure, and the challenge is making active components and passive waveguides work together on the same chip.

Design challenges

Making active and passive work on the same substrate

Optical gain comes from carrier occupation in strained multiple quantum wells, so the electronic states and the gain and absorption spectra have to be obtained before any optical layout is drawn. The same epitaxial structure has to be evaluated as an oscillator, an amplifier and an absorber, and photodetectors and passive waveguides have to work on the same chip alongside them. Keeping band structure through to circuit as one continuous chain is the premise.

Requirement | gain and absorption from a quantum calculationGain and absorption are computed from the real well and barrier structure, not replaced by constants
Requirement | longitudinal analysis of active componentsThe method used must capture multiple electrodes, distributed feedback and spatial hole burning
Requirement | thermal and electrical feedbackSelf-heating and carrier leakage feed back into the gain within the same calculation

Design and simulation workflow

From band structure to active components inside a circuit

01

Define the material and epitaxial structure

Prepare the optical constants of ternary and quaternary alloys lattice-matched to InP.

02

Optical mode and confinement

Obtain the effective index and confinement factor from the cross-sectional modes.

03

Quantum well gain and absorption calculation

Obtain gain and spontaneous emission spectra from the band structure.

04

Carrier and thermal analysis

Solve injection, transport and self-heating to obtain the state of the active region.

05

Longitudinal analysis of active components

Obtain the behavior as an oscillator, an amplifier and an absorber.

06

Photodetection and integration into the circuit

Model the photodetector as well, and place it in the circuit.

The stages differ by project. Amplifiers, modulators and photodetectors follow the same flow as lasers.

Related products

Products used at each step

The capabilities and coverage of each product are described on its own product page.

Lumerical MODE

Handles optical mode and confinement analysis. FDE gives the cross-sectional effective index and confinement factor.

Stage / 02

Lumerical Multiphysics

Handles gain and absorption, carrier and thermal analysis. MQW, CHARGE, HEAT and FEEM are solved together.

Stage / 02-04, 06

Lumerical INTERCONNECT

Handles longitudinal analysis of active components and their integration into the circuit. A travelling-wave model gives the behavior as an oscillator, an amplifier and an absorber.

Stage / 05-06

Lumerical CML Compiler

Handles compact model generation. Extracted results are organized into a model library usable in circuit analysis.

Stage / 06

Foundry and manufacturing

Connecting design data to manufacturing

Once the epitaxial structure and active component specification are settled, you move to prototyping on an InP platform. Because the epitaxial structure is closely tied to the manufacturing process, confirm before handover that the layer structure and composition the design assumes can be realized in the target process.

Which processes and prototyping routes are available is judged case by case from the target epitaxial structure and device specification.

Talk to us about your epitaxial structure and target device

Tell us where the design stands, whether the quantum well structure exists, whether the target is an oscillator, an amplifier or a photodetector, and whether you have measured data, and we will propose a way forward.